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. rtbx FileType:.. Uploaded By:.The present invention relates to a semiconductor device and, more particularly, to a semiconductor device which is designed to operate with low electric power consumption and a method of manufacturing the same.
A non-volatile semiconductor device which is electrically rewritable is characterized by a feature of non-volatile storage of data. Therefore, the non-volatile semiconductor device is mostly used as a file memory for a computer. It is necessary to employ a system so as to hold data under a condition that power is not supplied to the memory. For this reason, most of the non-volatile semiconductor devices are designed to have a backup power supply system and a power on reset system. The backup power supply system is a system which maintains data even though power is not supplied thereto, and the power on reset system is a system which resets data in a state that power is applied thereto.
In the prior art, a power on reset circuit or a backup circuit is usually provided independently from a memory circuit. However, a semiconductor device which includes both of them in one chip has been developed, as described in, for example, Japanese Unexamined Patent Publication No. 59-62027. This semiconductor device includes the backup power supply system or the power on reset system in a semiconductor memory circuit. In this semiconductor device, the system which resets the memory circuit is constituted by a transistor having a floating gate and a capacitor which is connected in series with the transistor.
The semiconductor device including a semiconductor memory circuit and a backup power supply system or a power on reset system in one chip has a drawback in which a size of a semiconductor chip is enlarged due to the inclusion of a circuit having a large number of elements such as transistors and capacitors. In this case, since the transistors and capacitors are electrically connected to each other, a parasitic capacitance is increased. Therefore, the power supply voltage is reduced to decrease the value of the parasitic capacitance, which is undesirable. In addition, the semiconductor device including a non-volatile memory circuit has a drawback in which a number of substrate bias voltage lines is increased to raise a manufacturing cost.
As a technique for solving these drawbacks, a technique for providing the backup power supply system and the power on reset system in one chip is disclosed in, for example, Japanese Unexamined Patent Publication No. 1-322322
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